Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GS88018T-100 | 100MHz 12ns 512K x 18 8Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
GS88018T-100I | 100MHz 12ns 512K x 18 8Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
GS88018T-11 | 100MHz 11ns 512K x 18 8Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
GS88018T-11.5 | 100MHz 11.5ns 512K x 18 8Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
GS88018T-11.5I | 100MHz 11.5ns 512K x 18 8Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
GS88018T-11I | 100MHz 11ns 512K x 18 8Mb synchronous burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
GS88018T-66 | 66MHz 18ns 512K x 18 8Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
GS88018T-80 | 80MHz 14ns 512K x 18 8Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
L88016 | 30 Watt, silicon gate enhancement mode RF power LDMOS transistor | distributor | - | 4 | -65°C | 150°C | 35 K |
L8801P | 10 Watt, silicon gate enhancement mode RF power LDMOS transistor | distributor | - | 8 | -65°C | 150°C | 40 K |
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