| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CEM8933 | 20V P-channel logic level enhancement mode field effect transistor | Chino-Excel-Technology-Corporation | - | 8 | -55°C | 150°C | 501 K |
| D2587P8935 | Wavelength-selected, high-power with locker isolated DFB laser module. ITU-T frequency 189.35 THz. Center wavelength 1583.27 nm. High optical power 20 mW, CW | distributor | Metal/ceramic butter | 14 | -25°C | 70°C | 122 K |
| ICS1893Y-10 | 3.3V 10 base-T/100 base-TX integrated PHYceiver | distributor | TQFP | 64 | 0°C | 70°C | 983 K |
| M64893AFP | Serial input PLL frequency synthesizer for TV/VCR | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 16 | -20°C | 75°C | 78 K |
| M64893AGP | Serial input PLL frequency synthesizer for TV/VCR | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 16 | -20°C | 75°C | 78 K |
| M64893GP | Serial input PLL frequency synthesizer for TV/VCR | Mitsubishi-Electric-Corporation-Semiconductor-Group | DIP | 16 | -20°C | 75°C | 49 K |
| MAX893LESA | 1.2A, current-limited, high-side P-channel switch with thermal shutdown. On-resistance 0.07omega | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 115 K |
| MAX893LESA | 1.2A, current-limited, high-side P-channel switch with thermal shutdown. On-resistance 0.07omega | Maxim-Integrated-Producs | SO | 8 | -40°C | 85°C | 115 K |
| PD8932 | InGaAsP- avalanche photo diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 85°C | 167 K |
| PD8933 | InGaAsP- avalanche photo diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 85°C | 128 K |
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