| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416RD8AD-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM416RD8AD-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM416RD8AD-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM418RD8AD-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| KM418RD8AD-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| LH52258AD-20 | CMOS 32K x 8 static RAM | Sharp | DIP | 28 | -65°C | 150°C | 77 K |
| LH52258AD-25 | CMOS 32K x 8 static RAM | Sharp | DIP | 28 | -65°C | 150°C | 77 K |
| LH5268AD-10LL | CMOS 32K x 8 static RAM | Sharp | DIP | 28 | 0°C | 70°C | 91 K |
| MC74HC158ADT | Quad 2-input data selector/multiplexer | Motorola | - | 16 | -55°C | 125°C | 220 K |
| S-24C08ADP | CMOS 2-wired serial EEPROM | Seiko-Epson-Corporation | DIP | 8 | -40°C | 85°C | 1 M |
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