| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C64ATM-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | -55°C | 125°C | 42 K |
| BZV58C62 | 62 V, 20 mA, 5 W glass passivated zener diode | distributor | - | 2 | -65°C | 175°C | 43 K |
| BZV58C68 | 68 V, 20 mA, 5 W glass passivated zener diode | distributor | - | 2 | -65°C | 175°C | 43 K |
| HN58C65FP-25 | 8192-word x 8-bit electrically erasable and programmable CMOS ROM, 250 ns | distributor | SOP | 28 | 0°C | 70°C | 152 K |
| HN58C65P-25 | 8192-word x 8-bit electrically erasable and programmable CMOS ROM, 250 ns | distributor | PDIP | 28 | 0°C | 70°C | 152 K |
| KM28C64A-12 | 8K x 8 bit CMOS electrically erasable PROM, 120ns | Samsung-Electronic | PLCC | 32 | 0°C | 70°C | 364 K |
| KM28C64A-15 | 8K x 8 bit CMOS electrically erasable PROM, 150ns | Samsung-Electronic | PLCC | 32 | 0°C | 70°C | 364 K |
| KM28C65A-12 | 8K x 8 bit CMOS electrically erasable PROM, 120ns | Samsung-Electronic | PLCC | 32 | 0°C | 70°C | 364 K |
| KM28C65A-15 | 8K x 8 bit CMOS electrically erasable PROM, 150ns | Samsung-Electronic | PLCC | 32 | 0°C | 70°C | 364 K |
| KM28C65A-25 | 8K x 8 bit CMOS electrically erasable PROM, 250ns | Samsung-Electronic | PLCC | 32 | 0°C | 70°C | 364 K |
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