| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C64APC-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28C64APC-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28C64APC-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28C64APC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | PDIP | 28 | 0°C | 70°C | 42 K |
| 28C64API-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | distributor | PDIP | 28 | -40°C | 85°C | 42 K |
| 28C64API-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | distributor | PDIP | 28 | -40°C | 85°C | 42 K |
| 28C64API-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | PDIP | 28 | -40°C | 85°C | 42 K |
| MT28C6428P20FM-85B | Low voltage, extended temperature flash and SRAM COMBO memory | distributor | FBGA | 67 | -40°C | 85°C | 571 K |
| MT28C6428P20FM-85BET | Low voltage, extended temperature flash and SRAM COMBO memory | distributor | FBGA | 67 | -40°C | 85°C | 571 K |
| MT28C6428P20FM-85T | Low voltage, extended temperature flash and SRAM COMBO memory | distributor | FBGA | 67 | -40°C | 85°C | 571 K |
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