| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FQA18N50V2 | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 624 K |
| FQA28N50 | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 762 K |
| FQA28N50F | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 647 K |
| FQP18N50V2 | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 839 K |
| FQPF18N50V2 | 500V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 839 K |
| PHB8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | SOT78 | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 90 K |
| PHP8N50E | PowerMOS transistor. Avalanche energy rated. | Philips-Semiconductors | TO220AB | 3 | -55°C | 150°C | 90 K |
| PHX8N50E | 500 V, power MOS transistor avalanche energy rated | Philips-Semiconductors | SOT | 3 | -55°C | 150°C | 74 K |
| [1] [2] 3 [4] |
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