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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
FSL9110D2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETsIntersil-Corporation----57 K
FSL9110R2.5A, -100V, 1.30 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETsIntersil-Corporation----57 K
FSL913A0D7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETsIntersil-Corporation----57 K
FSL913A0R7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETsIntersil-Corporation----57 K
FSL923A0D5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETsIntersil-Corporation----57 K
HUF75329S3S49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETsIntersil-Corporation----173 K
RF1K492117A, 12V, 0.020 Ohm, Logic Level, Single N-Channel LittleFETIntersil-Corporation----133 K
RF1K492212.5A, 60V, 0.130 Ohm, ESD Rated, Dual N-Channel LittleFETIntersil-Corporation----109 K
RF1K492232.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETTM Power MOSFETIntersil-Corporation----97 K
RF1K492243.5A and 2.5A, 30V, 0.060 and 0.150 Ohms, Complementary LittleFETTM Power MOSFETIntersil-Corporation----223 K
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