| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FSTJ9055D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 72 K |
| FSTJ9055R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 72 K |
| FSTYC9055D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 74 K |
| FSTYC9055R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 74 K |
| FSYE913A0D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 73 K |
| FSYE913A0R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 73 K |
| FSYE923A0R | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 70 K |
| HI5905N/QML | 14-Bit, 5 MSPS, Military A/D Converter | Intersil-Corporation | - | - | - | - | 93 K |
| HUF75829D3S | 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 122 K |
| HUF76639S3S | 50A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | Intersil-Corporation | - | - | - | - | 110 K |
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