| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MC-4R96CPE6C-745 | 96M-byte(48M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC-Electronics-Inc- | - | - | - | - | 131 K |
| MC-4R96CPE6C-745 | 96M-byte(48M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC-Electronics-Inc- | - | - | - | - | 131 K |
| MC-4R96CPE6C-845 | 96M-byte(48M-word x 16-bit) Direct Rambus(TM) DRAM RIMM(TM) Module | NEC-Electronics-Inc- | - | - | - | - | 131 K |
| MC-9400A | 320-bit AC-PDP data driver module | NEC-Electronics-Inc- | COB module | - | - | - | 82 K |
| NDL7910PC | Laser diode module for optical communications | NEC-Electronics-Inc- | - | - | - | - | 67 K |
| NE429M01 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 50 K |
| NE429M01-T1 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 50 K |
| NE429M01-T1 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 50 K |
| NE429M01-T2 | N-channel HJ-FET | NEC-Electronics-Inc- | - | - | - | - | 50 K |
| NE6500379A-T1 | L, S-BAND POWER GaAs MOS FET | NEC-Electronics-Inc- | 79A | - | - | - | 88 K |
| NE650R279A-T1 | Po GaAsFET | NEC-Electronics-Inc- | Surface mounting mol | - | - | - | 77 K |
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