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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BUZ901DPN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.distributor-30°C150°C39 K
BUZ901PN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.distributorTO24730°C150°C38 K
BUZ901X4SN-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 200V.distributorSOT22740°C150°C33 K
TC54VC2901EZBVoltage detector. Detected voltage 2.9V. Output form: CMOS output . Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VC3901EZBVoltage detector. Detected voltage 3.9V. Output form: CMOS output . Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VC4901EZBVoltage detector. Detected voltage 4.9V. Output form: CMOS output . Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VC5901EZBVoltage detector. Detected voltage 5.9V. Output form: CMOS output . Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VN3901EZBVoltage detector. Detected voltage 3.9V. Output form: Nch open drain. Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VN4901EZBVoltage detector. Detected voltage 4.9V. Output form: Nch open drain. Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
TC54VN5901EZBVoltage detector. Detected voltage 5.9V. Output form: Nch open drain. Tolerance +-1.0%.TelCom-Semiconductor-Inc--3-40°C85°C50 K
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