| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N2906E | Switching Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 51 K |
| 5962-9063301MCA | -18V;quad precision, low cost, high speed, BiFET Op Amp. For active filters, quad output buffers for 12and 14-bit DACs | Analog-Devices | DIP | 14 | -55°C | 125°C | 456 K |
| 5962-9063302MCA | -18V;quad precision, low cost, high speed, BiFET Op Amp. For active filters, quad output buffers for 12and 14-bit DACs | Analog-Devices | DIP | 14 | -55°C | 125°C | 456 K |
| AD9066AR | Dual 6-bit, 60MSPS monolithic A/D converter. For direct broadcast satellite (DBS) receivers, QAM demodulators | Analog-Devices | SOIC | 28 | -40°C | 85°C | 104 K |
| AD9066ARS | Dual 6-bit, 60MSPS monolithic A/D converter. For direct broadcast satellite (DBS) receivers, QAM demodulators | Analog-Devices | SSOP | 28 | -40°C | 85°C | 104 K |
| AD9066JR | Dual 6-bit, 60MSPS monolithic A/D converter. For direct broadcast satellite (DBS) receivers, QAM demodulators | Analog-Devices | SOIC | 28 | -40°C | 85°C | 104 K |
| KHB1906A01 | PHS | Korea-Electronics-Co--Ltd- | - | - | - | - | 14 K |
| LET19060C | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY | SGS-Thomson-Microelectronics | - | - | - | - | 34 K |
| LET9060C | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY | SGS-Thomson-Microelectronics | - | - | - | - | 36 K |
| LET9060S | RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE | SGS-Thomson-Microelectronics | - | - | - | - | 296 K |
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