| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FD1500BV-90DA | Soft recovery diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -20°C | 125°C | 27 K |
| FD500JV-90DA | Soft recovery diode for high power, high frequency, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -20°C | 125°C | 32 K |
| FG2000JV-90DA | Gate turn-off thyristor for high power inverter use, press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 41 K |
| FG4000CX-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 68 K |
| FG4000GX-90DA | Gate turn-off thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 68 K |
| FGR3000CV-90DA | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 79 K |
| FGR3000FX-90DA | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 82 K |
| FGR4000HX-90DS | Reverse-condition GTO thyristor for high power inverter use press pack type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 2 | -40°C | 125°C | 71 K |
| TM90DZ-H | 90A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 63 K |
| TM90DZ-M | 90A - transistor module for medium power general use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 63 K |
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