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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
IRFD9110HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -0.70 AInternational-Rectifier-4-55°C175°C173 K
IRFL9110HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -1.1AInternational-Rectifier-3-55°C150°C171 K
IRFR9110HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -3.1AInternational-Rectifier-3-55°C150°C172 K
IRFU9110HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -3.1AInternational-Rectifier-3-55°C150°C172 K
IRFU9110HEXFET power MOSFET. VDSS = -100V, RDS(on) = 1.2 Ohm, ID = -3.1AInternational-Rectifier-3-55°C150°C172 K
MLS9118-00812CDMA 799-824 MHz, Surface mount frequency synthesizerM-A-COM---manufacturer-of-RFSMT12-40°C85°C--
MLS9118-00812TRCDMA 799-824 MHz, Surface mount frequency synthesizerM-A-COM---manufacturer-of-RFSMT12-40°C85°C--
OM3911NTM3.0Amp three terminal, adjustable voltage regulatordistributor-3-55°C125°C42 K
OM3911STM3.0Amp three terminal, adjustable voltage regulatordistributor-3-55°C125°C42 K
OXFW911-TQ-AIEEE1394 to ATA/ATAPI native bridge with an integrated target SBP-2 controller.distributorTQFP1280°C70°C141 K
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