Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4935E | 200 V, 1 A, fast recovery diode | distributor | - | 2 | - | - | 55 K |
1N4935G | Glass passivated fast recovery rectifier. Maximum recurrent peak reverse voltage 200 V. Maximum average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 175°C | 160 K |
1N4935G | Fast recovery glass passivated rectifier. Max recurrent peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 175°C | 136 K |
1N4935G | 200 V, 1 A glass passivated fast recovery rectifier | distributor | - | 2 | -65°C | 175°C | 38 K |
1N4935G | 200 V, 1 A, fast GPP diode | distributor | - | 2 | - | - | 57 K |
1N4935G | Glass passivated fast recovery rectifier. Max repetitive peak reverse voltage 200 V. Max average forward rectified current 1.0 A. | distributor | - | 2 | -65°C | 150°C | 16 K |
1N4935GL | 200V, 1.0A fast recovery glass passivated rectifier | distributor | - | 2 | -55°C | 150°C | 34 K |
1N4935L | 200V, 1.0A fast recovery rectifier | distributor | - | 2 | -55°C | 125°C | 34 K |
1N5935B | Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 27V. Test current Izt = 13.9 mA. | distributor | - | 2 | -55°C | 150°C | 81 K |
1N5935B | 27 V, 1 A, 1.5 W, glass passivated junction silicon zener diode | distributor | - | 2 | -55°C | 150°C | 204 K |
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