| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N4936G | 400V; 1.0A fast recovery glass passivated rectifier; fast switching for high efficiency | distributor | - | 2 | -65°C | 150°C | 62 K |
| 1N4936GL | 400V; 1.0A fast recovery glass passivated rectifier; fast switching for high efficiency | distributor | - | 2 | -65°C | 150°C | 62 K |
| 1N4936GP | 1.0A, 400V ultra fast recovery rectifier | distributor | - | - | - | - | 164 K |
| 1N4936L | 400V; 1.0A fast recovery rectifier; fast switching for high efficiency | distributor | - | 2 | -65°C | 150°C | 59 K |
| 1N5936B | Pd=1.5W, Vz=30V zener diode | distributor | - | - | - | - | 124 K |
| HP4936DY | 5.8A, 30V, 0.037 Ohm, Dual N-Channel, Logic Level Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 152 K |
| PSMA5936B | Voltage regulator diode. Nominal zener voltage 30 V. Test current 12.5 mA. | Philips-Semiconductors | SOD106 | 2 | -65°C | 175°C | 75 K |
| PSMA5936B | Voltage regulator diode. Nominal zener voltage 30 V. Test current 12.5 mA. | Philips-Semiconductors | SOD106 | 2 | -65°C | 175°C | 75 K |
| SI4936DY | Dual N-Channel Enhancement Mode MOSFET | Fairchild-Semiconductor | - | - | - | - | 241 K |
| SI9936DY | Dual N-Channel Enhancement Mode MOSFET | Fairchild-Semiconductor | - | - | - | - | 240 K |
| SI9936DY | 30 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 8 | -55°C | 150°C | 260 K |
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