| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 93C46/SN | Memory configuration 64X16 Memory type Serial EEPROM Voltage Vcc 5 V Memory size 1 K-bit | Microchip-Technology-Inc- | SOIC | 8 | - | - | 432 K |
| FM93C46AN | 1K BIT SERIAL EEPROM | Fairchild-Semiconductor | - | - | - | - | 120 K |
| FM93C46L | 1024-Bit Serial CMOS EEPROM | Fairchild-Semiconductor | - | - | - | - | 114 K |
| KM93C46 | 1024-bits serial electrically erasable PROM | Samsung-Electronic | DIP | 8 | -10°C | 125°C | 190 K |
| KM93C46G | 1024-bits serial electrically erasable PROM | Samsung-Electronic | DIP | 8 | -10°C | 125°C | 190 K |
| KM93C46GD | 1024-bits serial electrically erasable PROM | Samsung-Electronic | DIP | 8 | -10°C | 125°C | 190 K |
| KM93C46GD | 1024-bits serial electrically erasable PROM | Samsung-Electronic | DIP | 8 | -10°C | 125°C | 190 K |
| KM93C46GDI | 1024-bits serial electrically erasable PROM | Samsung-Electronic | DIP | 8 | -10°C | 125°C | 190 K |
| KM93C46GI | 1024-bits serial electrically erasable PROM | Samsung-Electronic | DIP | 8 | -65°C | 150°C | 190 K |
| KM93C46I | 1024-bits serial electrically erasable PROM | Samsung-Electronic | DIP | 8 | -65°C | 150°C | 190 K |
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