Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N5949A | 100 V, 1.5 W silicon zener diode | distributor | - | 2 | -55°C | 175°C | 15 K |
1N5949B | Glass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 100V. Test current Izt = 3.7 mA. | distributor | - | 2 | -55°C | 150°C | 81 K |
1SMB5949A | 100 V, 1.5 W silicon zener diode | distributor | SMB | 2 | -55°C | 150°C | 15 K |
AMS9491AN | 1.235V voltage reference | distributor | - | 2 | 0°C | 70°C | 75 K |
AMS9491AS | 1.235V voltage reference | distributor | SOIC | 8 | 0°C | 70°C | 75 K |
AMS9491BN | 1.235V voltage reference | distributor | - | 2 | 0°C | 70°C | 75 K |
AMS9491BS | 1.235V voltage reference | distributor | SOIC | 8 | 0°C | 70°C | 75 K |
CMZ5949B | 100 V, surface mount silicon zener diode | distributor | SMA | - | -65°C | 150°C | 145 K |
DMF3949-106 | Chip on board mixer quad (to 10 GHz) | distributor | - | - | -55°C | 150°C | 33 K |
TC9491ACOA | Low power, bandgap voltage reference. Tempco 50 ppm/degC. | TelCom-Semiconductor-Inc- | SOIC | 8 | 0°C | 70°C | 45 K |
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