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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
1N5952A130 V, 1.5 W silicon zener diodedistributor-2-55°C175°C15 K
1N5952BGlass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 130V. Test current Izt = 2.9 mA.distributor-2-55°C150°C81 K
1N5952BGlass passivated junction silicon zener diode. Power 1.5Watts. Nominal zener voltage Vz @ Izt = 130V. Test current Izt = 2.9 mA.distributor-2-55°C150°C81 K
1SMB5952A130 V, 1.5 W silicon zener diodedistributorSMB2-55°C150°C15 K
C1952PChannel photomultiplexer, 3/4 inche, special type for photon counting, dark counts 400 cps.distributor-40°C50°C859 K
C952PChannel photomultiplexer, 1/3 inche, special type for photon counting, dark counts 40 cps.distributor-40°C50°C859 K
IRF9520NLHEXFET power MOSFET. VDSS = -100V, RDS(on) = 0.48 Ohm, ID = -6.8AInternational-Rectifier-3-55°C175°C155 K
MH1952P3/4 inche CPM module. P-version. Input voltage 5V to +5.5V DC. Window material quartz. Dark counts per second 400 cps(typ.).distributor-65°C40°C562 K
MH952P1/3 inche CPM module. P-version Input voltage 5V to +5.5V DC. Window material quartz. Dark counts per second 40 cps(typ.).distributor-65°C40°C562 K
MH952PUltra high sensitivity gateable photon counting module. P version. Dark counts 50 cps(typ.)distributor-55°C40°C53 K
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