| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5953A | 1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-10% tolerance. | distributor | - | 2 | -55°C | 175°C | 157 K |
| 1N5953B | 1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-5% tolerance. | distributor | - | 2 | -55°C | 175°C | 157 K |
| 1N5953B | 150 V, 1.5 W, glass passivated junction silicon zener diode | distributor | - | 2 | -55°C | 150°C | 204 K |
| 1N5953C | 1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-2% tolerance. | distributor | - | 2 | -55°C | 175°C | 157 K |
| 1N5953D | 1.5 W, silicon zener diode. Zener voltage 150 V. Test current 2.5 mA. +-1% tolerance. | distributor | - | 2 | -55°C | 175°C | 157 K |
| BUK9535-55 | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | TO220AB | 3 | -55°C | 175°C | 65 K |
| IRF9530 | P-channel MOSFET, 100V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRF9531 | P-channel MOSFET, 60V, 12A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRF9532 | P-channel MOSFET, 100V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
| IRF9533 | P-channel MOSFET, 60V, 10A | Samsung-Electronic | - | 3 | -55°C | 150°C | 378 K |
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