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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962H9659601VXCRadHard MSI: SMD. Dual 4-input NOR gate. Class V, QML. Lead finish gold. Total dose 1E6 rads(Si).distributorCeramic flatpack14-55°C125°C10 M
5962H9659601VXXRadHard MSI: SMD. Dual 4-input NOR gate. Class V, QML. Lead finish optional. Total dose 1E6 rads(Si).distributorCeramic flatpack14-55°C125°C10 M
5962L9960701QUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)distributorCeramic flatpack36-55°C125°C127 K
5962L9960702QUX512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)distributorCeramic flatpack36-40°C125°C127 K
5962L9960703QUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)distributorCeramic flatpack36-55°C125°C127 K
5962L9960703QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)distributorCeramic flatpack36-55°C125°C127 K
5962L9960703QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)distributorCeramic flatpack36-55°C125°C127 K
5962L9960704QUC512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 5E4(50krad)(Si)distributorCeramic flatpack36-40°C125°C127 K
5962L9960704QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)distributorCeramic flatpack36-40°C125°C127 K
5962L9960704QUX512K x 8 SRAM: SMD. 20ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 5E4(50krad)(Si)distributorCeramic flatpack36-40°C125°C127 K
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