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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
5962-0151101QXC512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class Q. Total dose nonedistributorCQFP68-40°C125°C135 K
5962-0151101TXC512K32 16Megabit SRAM MCM: SDM. 25ns access time, 5.0V operation. Lead finish gold. QML class T. Total dose nonedistributorCQFP68-40°C125°C135 K
5962R-0323501QUX512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si).distributorCeramic flatpack36-55°C125°C109 K
5962R-0323501VUC512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).distributorCeramic flatpack36-55°C125°C109 K
5962R-0323501VUX512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).distributorCeramic flatpack36-55°C125°C109 K
5962R-0323501VUX512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).distributorCeramic flatpack36-55°C125°C109 K
5962R-0323502QUC512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si).distributorCeramic flatpack36-40°C125°C109 K
5962R-0323502VUC512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si).distributorCeramic flatpack36-40°C125°C109 K
5962R-0323502VUX512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).distributorCeramic flatpack36-40°C125°C109 K
5962R-0323502VUX512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si).distributorCeramic flatpack36-40°C125°C109 K
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