| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 5962L0153201QYA | 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). | distributor | CFP | 44 | -40°C | 125°C | 95 K |
| 5962L0153201QYA | 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). | distributor | CFP | 44 | -40°C | 125°C | 95 K |
| 5962L0153201TYA | 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)). | distributor | CFP | 44 | -40°C | 125°C | 95 K |
| 5962L0153201TYC | 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)). | distributor | CFP | 44 | -40°C | 125°C | 95 K |
| 5962L0153201TYX | 1024K8 SRAM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)). | distributor | CFP | 44 | -40°C | 125°C | 95 K |
| 5962L8771002QGA | Low Power Dual Operational Amplifier | distributor | - | 8 | - | - | 476 K |
| 5962L8771002QPA | Low Power Dual Operational Amplifier | distributor | Cerdip | 8 | - | - | 476 K |
| 5962L8771002VGA | Low Power Dual Operational Amplifier | distributor | - | 8 | - | - | 476 K |
| 5962L8771002VPA | Low Power Dual Operational Amplifier | distributor | Cerdip | 8 | - | - | 476 K |
| M57962L | Hybrid IC for driving IGBT modules | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 14 | -20°C | 60°C | 24 K |
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