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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HYB39S64160ATL-10 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64160ATL-8 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64160ATL-8B | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64400ATL-10 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64800ATL-10 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64800ATL-8 | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| HYB39S64800ATL-8B | 64Mbit Synchronous DRAM | Infineon-formely-Siemens | - | 54 | 0°C | 70°C | 678 K |
| IDT71V509S66Y | 128K x 8 3.3V synchronous SRAM with ZBT and flow-through output | Integrated-Device-Technology-Inc- | SOJ | 44 | 0°C | 70°C | 94 K |
| TC59S6416BFT-80 | 1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM | Toshiba | TSOP | 54 | 0°C | 70°C | 2 M |
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