| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1016 | PNP epitaxial planar silicon transistor, high voltag, low-noise amp application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 127 K |
| 2SA1016K | PNP epitaxial planar silicon transistor, high voltag, low-noise amp application | SANYO-Electric-Co--Ltd- | 2003A | 3 | - | - | 127 K |
| CXA1047M | Recording Y/C Amplifier | Sony-Semiconductor | - | - | - | - | 423 K |
| CXA1077M | Wideband Differential Amplifier(DC to 180 MHz) | Sony-Semiconductor | - | - | - | - | 126 K |
| HCA10008 | 80V/2.5A Peak, High Frequency Full Bridge FET Driver | Intersil-Corporation | - | - | - | - | 87 K |
| HCA10009 | 100MHz, Single and Dual Low Noise, Precision Operational Amplifier | Intersil-Corporation | - | - | - | - | 529 K |
| HCA10014 | 15MHz, BiMOS Operational Amplifier with MOSFET Input/CMOS Output | Intersil-Corporation | - | - | - | - | 521 K |
| KRA107S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (10 kOm and 47 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 357 K |
| KRA108S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (22 kOm and 47 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 357 K |
| KRA109S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (47 kOm and 22 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 357 K |
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