| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SA1015GR | 400mW PNP silicon transistor | distributor | - | 3 | -55°C | 125°C | 73 K |
| FSH05A10B | 100 V, diode | distributor | TO | 3 | -40°C | 150°C | -- |
| FSH10A10B | 100 V, diode | distributor | TO | 3 | -40°C | 150°C | -- |
| GSH05A10B | 100 V, diode | distributor | TO | 3 | -40°C | 150°C | 29 K |
| GSH10A10B | 100 V, diode | distributor | TO | 3 | -40°C | 150°C | 29 K |
| KSH15A10B | 100 V, diode | distributor | TO | 3 | -40°C | 150°C | 31 K |
| MDA102G | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 200V, max RMS bridge input voltage 140V, max DC blocking voltage 200V. Max average forward output current 1.0A at Ta=75degC. | distributor | - | 4 | -55°C | 125°C | 21 K |
| MDA104G | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 400V, max RMS bridge input voltage 280V, max DC blocking voltage 400V. Max average forward output current 1.0A at Ta=75degC. | distributor | - | 4 | -55°C | 125°C | 21 K |
| MDA106G | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 600V, max RMS bridge input voltage 420V, max DC blocking voltage 600V. Max average forward output current 1.0A at Ta=75degC. | distributor | - | 4 | -55°C | 125°C | 21 K |
| MDA108G | Single-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 800V, max RMS bridge input voltage 560V, max DC blocking voltage 800V. Max average forward output current 1.0A at Ta=75degC. | distributor | - | 4 | -55°C | 125°C | 21 K |
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