Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SA1177 | PNP epitaxial planar silicon transistor, HF amp application | SANYO-Electric-Co--Ltd- | 2033 | 3 | - | - | 118 K |
HFA1100 | 850MHz, Low Distortion Current Feedback Operational Amplifiers | Intersil-Corporation | - | - | - | - | 134 K |
HFA1110 | 750MHz, Low Distortion Unity Gain, Closed Loop Buffer | Intersil-Corporation | - | - | - | - | 90 K |
HFA1113 | 850MHz, Low Distortion, Output Limiting, Programmable Gain, Buffer Amplifier | Intersil-Corporation | - | - | - | - | 252 K |
KRA116S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (1 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 184 K |
KRA117S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (2.2 and 2.2 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 184 K |
KRA118M | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (2.2 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 178 K |
KRA118S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (2.2 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 184 K |
KRA119M | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (4.7 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 178 K |
KRA119S | PNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (4.7 and 10 kOm) | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 184 K |
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