| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| DLA11C | Diffused junction type silicon diode, 1,1A ultrahigh-speed rectifier | SANYO-Electric-Co--Ltd- | 1188 | 2 | - | - | 50 K |
| INA118PB | Precision, Low Power Intrumentation Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 242 K |
| INA118U | Precision, Low Power Intrumentation Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 242 K |
| INA118U/2K5 | Precision, Low Power Intrumentation Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 242 K |
| INA118UB | Precision, Low Power Intrumentation Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 242 K |
| INA118UB/2K5 | Precision, Low Power Intrumentation Amplifier | Burr-Brown-Corporation | 8 | - | -40°C | 85°C | 242 K |
| OPA111AM | Low-Noise Precision FET Operational Amplifier | Burr-Brown-Corporation | 8 | - | -55°C | 125°C | 178 K |
| OPA111BM | Low-Noise Precision FET Operational Amplifier | Burr-Brown-Corporation | 8 | - | -55°C | 125°C | 178 K |
| OPA111SM | Low-Noise Precision FET Operational Amplifier | Burr-Brown-Corporation | 8 | - | -55°C | 125°C | 178 K |
| OPA111SMQ | Low-Noise Precision FET Operational Amplifier | Burr-Brown-Corporation | 8 | - | -55°C | 125°C | 178 K |
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