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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
2SA1207PNP epitaxial planar silicon transistor, high-voltage switching, AF 60W predriver applicationSANYO-Electric-Co--Ltd-2003A3--108 K
KRA120MPNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (10 and 4.7 kOm)Korea-Electronics-Co--Ltd--3-55°C150°C178 K
KRA120SPNP transistor for switching applications, interface circuit and driver circuit applications. With buit-in bias resistors (10 and 4.7 kOm)Korea-Electronics-Co--Ltd--3-55°C150°C184 K
SMTPA120TRISILSGS-Thomson-Microelectronics----61 K
STTA12006TV1TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODESGS-Thomson-Microelectronics----73 K
STTA12006TV2TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODESGS-Thomson-Microelectronics----73 K
STTA1206DTURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODESGS-Thomson-Microelectronics----88 K
STTA1206DITURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODESGS-Thomson-Microelectronics----88 K
STTA1206GTURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODESGS-Thomson-Microelectronics----88 K
TPA120TRISILSGS-Thomson-Microelectronics----53 K
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