| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CHA5215aFKF/23 | 5.8GHz medium power amplifier | distributor | Flatpack | 7 | -50°C | 70°C | 183 K |
| KRA521T | Built in Bias Resistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 67 K |
| SA5211D | Transimpedance amplifier (180MHz). | Philips-Semiconductors | - | 14 | -40°C | 85°C | -- |
| SA5211D | Transimpedance amplifier (180MHz). | Philips-Semiconductors | SO | 14 | -40°C | 85°C | 186 K |
| SA5212AD | Transimpedance amplifier (140MHz). | Philips-Semiconductors | SO | 8 | -40°C | 85°C | 596 K |
| SA5212AD | Transimpedance amplifier (140MHz). | Philips-Semiconductors | - | 8 | -40°C | 85°C | 596 K |
| SA5212AD | Transimpedance amplifier (140MHz). | Philips-Semiconductors | - | 8 | -40°C | 85°C | 596 K |
| SA5219D | Wideband variable gain amplifier. | Philips-Semiconductors | SO | 16 | -40°C | 85°C | 238 K |
| SA5219D | Wideband variable gain amplifier. | Philips-Semiconductors | - | 16 | -40°C | 85°C | 238 K |
| SA5219N | Wideband variable gain amplifier. | Philips-Semiconductors | - | 16 | -40°C | 85°C | 238 K |
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