| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| C65SC02-AC-4 | CMOS 8-bit microprocessor | California-Micro-Devices | Ceramic | 40 | 0°C | 70°C | 664 K |
| C65SC02-AC-5 | CMOS 8-bit microprocessor | California-Micro-Devices | Ceramic | 40 | 0°C | 70°C | 664 K |
| C65SC02-AC-6 | CMOS 8-bit microprocessor | California-Micro-Devices | Ceramic | 40 | 0°C | 70°C | 664 K |
| KM416RD8AC-RG60 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM416RD8AC-RK70 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM416RD8AC-RK80 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM418RD8AC-RG60 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, speed: 600 Mbps(300 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| KM418RD8AC-RK70 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). | Samsung-Electronic | microBGA(normal CSP) | 62 | 0°C | 70°C | 3 M |
| NJMDAC-08DC | 8-bit high speed multiplying D/A converter | New-Japan-Radio-Co--Ltd--JRC | DIP | 16 | -20°C | 75°C | 206 K |
| NJMDAC-08MDC | 8-bit high speed multiplying D/A converter | New-Japan-Radio-Co--Ltd--JRC | DMP | 16 | -20°C | 75°C | 206 K |
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