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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| BSM100GAL120DN2 | 1200V/150A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 81 K |
| BSM150GAL120DN2 | 1200V/210A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 81 K |
| BSM150GAL120DN2E3166 | 1200V/210A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 80 K |
| BSM200GAL120DN2 | 1200V/290A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 76 K |
| BSM25GAL120DN2 | 1200V/38A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 62 K |
| BSM50GAL120DN2 | 1200V/78A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 62 K |
| BSM75GAL120DN2 | 1200V/105A IGBT power module | Infineon-formely-Siemens | - | 7 | - | - | 62 K |
| SM5009AL1S | Crystal oscillator module, 2.7V to 5.5V | distributor | SOP | 8 | -20°C | 80°C | 163 K |
| TIBPAL16R8-7MJB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | J | 20 | -55°C | 125°C | 271 K |
| TIBPAL16R8-7MWB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | W | 20 | -55°C | 125°C | 271 K |
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