| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GAL16V8D-10LP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-10QJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-10QP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-3LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-5LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-7LJ | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | PLCC | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-7LP | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | DIP | 20 | 0°C | 75°C | 316 K |
| GAL16V8D-7LS | High performance E2CMOS PLD | Lattice-Semiconductor-Corporation | SOIC | 20 | 0°C | 75°C | 316 K |
| TIBPAL16R8-7MJB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | J | 20 | -55°C | 125°C | 271 K |
| TIBPAL16R8-7MWB | HIGH-PERFORMANCE IMPACT-X(TM) PAL(R) CIRCUITS | Texas-Instruments | W | 20 | -55°C | 125°C | 271 K |
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