| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BCR1AM-12 | 1A semiconductor for low power use, glass passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 106 K |
| BCR1AM-8 | 1A semiconductor for low power use, planar passivation type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 125°C | 104 K |
| CT60AM-18B | 60A insulated gate bipolar transistor for resonant inverter use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 43 K |
| CT75AM-12 | 75A insulated gate bipolar transistor for general inverter ups use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 38 K |
| K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R271669AM-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R271669AM-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R441869AM-CG6 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R441869AM-CK7 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
| K4R441869AM-CK8 | 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung-Electronic | microBGA(mirrored CS | 62 | 0°C | 70°C | 3 M |
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