| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ISL9N302AS3ST | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 253 K |
| ISL9N303AS3ST | N-Channel Logic Level UltraFETR Trench MOSFETs 30V, 75A, 3.2mOhm | Fairchild-Semiconductor | - | - | - | - | 269 K |
| ISL9N304AS3ST | N-Channel Logic Level UltraFET R Trench MOSFETs 30V, 75A, 4.5mOhm | Fairchild-Semiconductor | - | - | - | - | 195 K |
| ISL9N306AS3ST | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 205 K |
| PXAS30KBA | 30 MHz, 16-bit microcontroller family | Philips-Semiconductors | PLCC | 68 | 0°C | 70°C | 295 K |
| PXAS33KBA | 30 MHz, 16-bit microcontroller family | Philips-Semiconductors | PLCC | 68 | 0°C | 70°C | 295 K |
| V302AS32 | High energy metal-oxide arrester block. Rated voltage (RMS) 3.0 kV, reference current 5.0 mA. | distributor | - | 2 | 0°C | 60°C | 184 K |
| V402AS32 | High energy metal-oxide arrester block. Rated voltage (RMS) 4.0 kV, reference current 5.0 mA. | distributor | - | 2 | 0°C | 60°C | 184 K |
| V502AS32 | High energy metal-oxide arrester block. Rated voltage (RMS) 5.0 kV, reference current 5.0 mA. | distributor | - | 2 | 0°C | 60°C | 184 K |
| V602AS32 | High energy metal-oxide arrester block. Rated voltage (RMS) 6.0 kV, reference current 5.0 mA. | distributor | - | 2 | 0°C | 60°C | 184 K |
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