| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BAS31 | General purpose controlled avalanche (double) diode. | Philips-Semiconductors | SOT23 | 3 | 0°C | 150°C | 90 K |
| BAS316 | High-speed diode. | Philips-Semiconductors | SOD323 | 2 | 0°C | 150°C | 69 K |
| BAS321 | General purpose diode. | Philips-Semiconductors | SOD323 | 2 | 0°C | 150°C | 88 K |
| BAS32L | High-speed diode. Repetitive peak reverse voltage 75 V. | Philips-Semiconductors | SOD80C | 2 | 0°C | 200°C | 38 K |
| BAS35 | Small Signal Diode | Fairchild-Semiconductor | - | - | - | - | 29 K |
| ISL9N307AS3ST | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 141 K |
| ISL9N308AS3ST | N-Channel Logic Level UltraFET ® Trench MOSFETs 30V, 75A, 8mOhm | Fairchild-Semiconductor | - | - | - | - | 140 K |
| ISL9N310AS3ST | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 149 K |
| ISL9N312AS3ST | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 140 K |
| ISL9N322AS3ST | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 140 K |
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