| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256ASC-1 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-2 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C256ASC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | 0°C | 70°C | 41 K |
| 28C64ASC-1 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 120 ns. | distributor | SOIC | 28 | 0°C | 70°C | 42 K |
| 28C64ASC-2 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 150 ns. | distributor | SOIC | 28 | 0°C | 70°C | 42 K |
| 28C64ASC-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. | distributor | SOIC | 28 | 0°C | 70°C | 42 K |
| 28C64ASC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | SOIC | 28 | 0°C | 70°C | 42 K |
| AD536ASCHIPS | 18V; 500mW; integrated circuit true RMS-to-DC converter | Analog-Devices | Die | 10 | -55°C | 125°C | 165 K |
| G83ASC-DC48-K | Relay. Coil voltage 48 VDC. Contact form: 1 form A. Sealed. Contact material AgCdO. Sensitive. | distributor | - | - | -30°C | 60°C | 53 K |
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