Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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GS881E36AT-200 | 200MHz 6.5ns 256K x 36 8Mb sync burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
GS881E36AT-200I | 200MHz 6.5ns 256K x 36 8Mb sync burst SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
GS881Z18AT-200I | 200MHz 6.5ns 512K x 18 8Mb pupelined and flow through sync NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
GS881Z36AT-200 | 200MHz 6.5ns 256K x 36 8Mb pupelined and flow through sync NBT SRAM | distributor | TQFP | 100 | 0°C | 70°C | 1 M |
GS881Z36AT-200I | 200MHz 6.5ns 256K x 36 8Mb pupelined and flow through sync NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
GS881Z36AT-200I | 200MHz 6.5ns 256K x 36 8Mb pupelined and flow through sync NBT SRAM | distributor | TQFP | 100 | -40°C | 85°C | 1 M |
KM681002AT-20 | 128K x 8 high speed static RAM, 5V operating, 20ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 171 K |
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