| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ASAT10 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 2 | -65°C | 200°C | 17 K |
| BAT17 | Schottky Diode | General-Semiconductor | - | - | - | - | 81 K |
| BAT17-06W | Silicon schottky diode | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 39 K |
| BAT17DS | Schottky Diode | General-Semiconductor | - | - | - | - | 81 K |
| BAT17W | Schottky Diode | General-Semiconductor | - | - | - | - | 81 K |
| BAT17WS | Schottky Diode | General-Semiconductor | - | - | - | - | 77 K |
| BAT18 | Silicon RF switching diode | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 39 K |
| BAT18-04 | Silicon RF switching diode | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 39 K |
| BAT18-05 | Silicon RF switching diode | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 39 K |
| BAT18-06 | Silicon RF switching diode | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 39 K |
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