| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BYQ30EB-100 | Recifier diode ultrafast, rugged. | Philips-Semiconductors | SOT404 | 3 | 0°C | 150°C | 48 K |
| DS1220AB-100 | 2k x 8 CMOS nonvolatile SRAM, 100ns | Dallas-Semiconductor | DIP | 24 | 0°C | 70°C | 179 K |
| DS1220AB-100-IND | 2k x 8 CMOS nonvolatile SRAM, 100ns | Dallas-Semiconductor | DIP | 24 | -40°C | 85°C | 179 K |
| DS1235AB-100 | 256K nonvoltage SRAM, 100ns | Dallas-Semiconductor | DIP | 28 | 0°C | 70°C | 511 K |
| M27C256B-10C6TR | 256 Kbit (32Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | PLCC | 32 | -40°C | 85°C | 107 K |
| M27C256B-10XC6 | 256 Kbit (32Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | PLCC | 32 | -40°C | 85°C | 107 K |
| M27C256B-10XC6TR | 256 Kbit (32Kb x 8) EPROM, 5V, 100ns | SGS-Thomson-Microelectronics | PLCC | 32 | -40°C | 85°C | 107 K |
| MT55L256L36PB-10IT | 256K x 36 ZBT SRAM, 10ns | distributor | BGA | 119 | -40°C | 85°C | 497 K |
| MT55L256V32PB-10 | 256K x 32 ZBT SRAM, 10ns | distributor | BGA | 119 | 0°C | 70°C | 497 K |
| MT55L256V36PB-10 | 256K x 36 ZBT SRAM, 10ns | distributor | BGA | 119 | 0°C | 70°C | 497 K |
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