Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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FAR-C4SB-11059-K22-U | Piezoelectric resonator | Fujitsu-Microelectronis | SIP | 3 | -30°C | 85°C | 305 K |
FAR-C4SB-11059-L22-U | Piezoelectric resonator | Fujitsu-Microelectronis | SIP | 3 | -30°C | 85°C | 305 K |
FAR-C4SB-11059-M22-U | Piezoelectric resonator | Fujitsu-Microelectronis | SIP | 3 | -30°C | 85°C | 305 K |
GS88218B-11 | 100MHz 11ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
GS88218B-11.5 | 100MHz 11.5ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | 0°C | 70°C | 1 M |
GS88218B-11.5I | 100MHz 11.5ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
GS88218B-11I | 100MHz 11ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
GS88218B-11I | 100MHz 11ns 514K x 18 8Mb S/DCD sync burst SRAM | distributor | BGA | 165 | -40°C | 85°C | 1 M |
MA4E1339B-1146T | 20 V, Silicon medium barrier schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 118 K |
MA4E2054B-1146T | 3 V, surface mount low barrier X-band schottky diode | M-A-COM---manufacturer-of-RF | SOT | 3 | -55°C | 125°C | 147 K |
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