| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 269-B-240-F1480-A | 1480 nm pump laser module. B - nonisolated, PMF. Operating power 240 mW. A = no connector. | distributor | Butterffly package | 14 | 0°C | 75°C | 85 K |
| 269-B-240-F1480-B | 1480 nm pump laser module. B - nonisolated, PMF. Operating power 240 mW. B = SC/APC connector. | distributor | Butterffly package | 14 | 0°C | 75°C | 85 K |
| D83C51FB-24 | CHMOS single-chip 8-bit microcontroller.Commercial. 3.5 MHz to 24 MHz, ROM 16 Kbytes, RAM 256 bytes | Intel-Corporation | CERDIP | 40 | 0°C | 70°C | 259 K |
| N83C51FB-24 | CHMOS single-chip 8-bit microcontroller.Commercial. 3.5 MHz to 24 MHz, ROM 16 Kbytes, RAM 256 bytes | Intel-Corporation | PLCC | 44 | 0°C | 70°C | 259 K |
| P83C51FB-24 | CHMOS single-chip 8-bit microcontroller.Commercial. 3.5 MHz to 24 MHz, ROM 16 Kbytes, RAM 256 bytes | Intel-Corporation | PDIP | 40 | 0°C | 70°C | 259 K |
| QM30TB-24 | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 75 K |
| QM30TB-24B | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 88 K |
| QM50TB-24 | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 86 K |
| QM50TB-24B | 50A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 86 K |
| S83C51FB-24 | CHMOS single-chip 8-bit microcontroller.Commercial. 3.5 MHz to 24 MHz, ROM 16 Kbytes, RAM 256 bytes | Intel-Corporation | QFP | 44 | 0°C | 70°C | 259 K |
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