Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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AS29F200B-55SC | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns | Alliance-Semiconductor-Corporation | SO | 44 | 0°C | 70°C | 375 K |
AS29F200B-55SI | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns | Alliance-Semiconductor-Corporation | SO | 44 | -40°C | 85°C | 375 K |
AS29F200B-55TI | 5V 256K x 8 or 128 x 16 CMOS flash EEPROM, access time 55ns | Alliance-Semiconductor-Corporation | TSOP | 48 | -40°C | 85°C | 375 K |
EN29F002NB-55J | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | distributor | PLCC | 32 | 0°C | 70°C | 267 K |
EN29F002NB-55JI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | distributor | PLCC | 32 | -40°C | 85°C | 267 K |
EN29F002NB-55PI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | distributor | PDIP | 32 | -40°C | 85°C | 267 K |
EN29F002NB-55T | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | distributor | TSOP | 32 | 0°C | 70°C | 267 K |
EN29F002NB-55TI | 2 Megabit (256K x 8-bit) flach memory. Speed 55ns. 5.0V +-10% for both read/write operation. Without RESET function. | distributor | TSOP | 32 | -40°C | 85°C | 267 K |
EN29F800B-55T | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 55ns. Bottom sector. | distributor | TSOP | 48 | 0°C | 70°C | 221 K |
EN29F800B-55TI | 8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 55ns. Bottom sector. | distributor | TSOP | 48 | -40°C | 85°C | 221 K |
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