| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| D1861B023 | 10 Gbits/s 1310 nm DML module (-3 dBm). Connector FC/SPC | distributor | - | 7 | -40°C | 80°C | 92 K |
| EFB025A | 6-10V general purpose GaAs power FET | distributor | - | - | - | - | 29 K |
| EPB025A | 3-5V high super low noise high gain heterojunction power FET | distributor | - | - | - | - | 33 K |
| EPB025A-70 | 3-5V low noise high gain heterojunction power FET | distributor | - | - | - | - | 26 K |
| PI90LVB024L | LVDS dual 2x2 crosspoint/repeater switch | distributor | TSSOP | 28 | -40°C | 85°C | 151 K |
| PI90LVB027AU | 3V LVDS high-speed differential line driver | distributor | MSOP | 8 | -40°C | 85°C | 587 K |
| PI90LVB027AW | 3V LVDS high-speed differential line driver | distributor | SOIC | 8 | -40°C | 85°C | 587 K |
| S5T8554B02-L0B0 | 1 chip CODEC | Samsung-Electronic | Cer DIP | 16 | -25°C | 125°C | 125 K |
| S5T8557B02-L0B0 | 1 chip CODEC | Samsung-Electronic | Cer DIP | 16 | -25°C | 125°C | 125 K |
| SB020 | 20 V, 1 A, Schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 289 K |
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