| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1MB10-120 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 226 K |
| 1MB10D-120 | Fuji discrete package IGBT | distributor | - | 3 | - | - | 269 K |
| MGRB1018 | Gallium arsenide power rectifier | Motorola | D2PAK | 4 | -55°C | 175°C | 153 K |
| MGRB1018 | Gallium arsenide power rectifier | Motorola | D2PAK | 4 | -55°C | 175°C | 153 K |
| MHPM6B10A60D | Hybrid power module | Motorola | - | 16 | -40°C | 150°C | 166 K |
| PB1008/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
| PB1010/S | Silicon bridge rectifier | Diotec-Elektronische | - | 4 | -50°C | 150°C | 57 K |
| VHB10-12F | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
| VHB10-12S | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 16 K |
| VHB100-12 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
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