| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1016 | PNP epitaxial silicon transistor. Power amplifier vertical defclection output. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| 2SB1033 | PNP epitaxial silicon transistor. Low frequency power amplifier. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 3 | - | - | 69 K |
| B10S | 0.5A single-phase mini surafce mount bridge rectifier | distributor | - | 4 | -55°C | 150°C | 362 K |
| CEB1012 | N-channel enhancement mode field transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 498 K |
| CEB1012L | N-channel enhancement mode field transistor | Chino-Excel-Technology-Corporation | - | 3 | -65°C | 150°C | 497 K |
| DB101 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 50V. Maximum RMS bridge input voltage 35V. Maximum DC blocking voltage 50V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 4 | -65°C | 150°C | 272 K |
| DB102 | Single-phase silicon bridge rectifier. Current 1.0A. Maximum recurrent peak reverse voltage 100V. Maximum RMS bridge input voltage 70V. Maximum DC blocking voltage 100V. | Wing-Shing-Electronic-Co----manufacturer-of-power-semiconductors | - | 4 | -65°C | 150°C | 272 K |
| DB107S | 1.0A single-phase surface mount bridge rectifier | distributor | - | 4 | -55°C | 150°C | 424 K |
| EIB1011-2P | 10.7-11.7GHz, 2W internally matched power FET | distributor | - | 2 | - | - | 22 K |
| EIB1011-4P | 10.7-11.7GHz, 4W internally matched power FET | distributor | - | 2 | - | - | 22 K |
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