| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| Am29SL800CB100WBC | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 100ns | AMD-Advanced-Micro-Devices | FBGA | 48 | 0°C | 70°C | 549 K |
| Am29SL800CB100WBC | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 100ns | AMD-Advanced-Micro-Devices | FBGA | 48 | 0°C | 70°C | 549 K |
| Am29SL800CB100WBCB | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 100ns | AMD-Advanced-Micro-Devices | FBGA | 48 | 0°C | 70°C | 549 K |
| Am29SL800CB100WBI | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 100ns | AMD-Advanced-Micro-Devices | FBGA | 48 | -40°C | 85°C | 549 K |
| Am29SL800CB100WBIB | 8 Megabit (1 M x 8-bit/512 K x 16-bit) CMOS 1.8 volt-only super low voltage flash memory, 100ns | AMD-Advanced-Micro-Devices | FBGA | 48 | -40°C | 85°C | 549 K |
| B10A100VIC | Schottky Barrier Diode | Korea-Electronics-Co--Ltd- | - | - | - | - | 36 K |
| B10A90VIC | Schottky Barrier Diode | Korea-Electronics-Co--Ltd- | - | - | - | - | 74 K |
| FQB10N20 | 200V N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 794 K |
| FQB10N20L | 200V LOGIC N-Channel MOSFET | Fairchild-Semiconductor | - | - | - | - | 574 K |
| KSB1015 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 50 K |
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