Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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DB102 | 100V; 1.0A glass passivated bridge rectifier | distributor | Molded Plastic | 4 | -65°C | 150°C | 61 K |
DB102 | 1A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 84 K |
DB102 | 200 V, 1.0 A dual-in-line glass passivated single phase bridge rectifier | distributor | DIP | 4 | -55°C | 125°C | 75 K |
DB102S | Single phase surface mount bridge rectifier. Maximum recurrent peak reverse voltage 100 V. Maximum average forward rectified current 1.0 A. | distributor | - | 4 | -65°C | 125°C | 150 K |
KSB1022 | PNP Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 47 K |
MB102 | 10A, 200V ultra fast recovery rectifier | distributor | - | - | - | - | 79 K |
SB1020 | 10A, 20V ultra fast recovery rectifier | distributor | - | - | - | - | 391 K |
SB1020 | 20 V, 10 A, schottky barrier rectifier | distributor | - | 2 | -50°C | 150°C | 146 K |
SB1020F | 20 V, 10 A, isolation schottky barrier rectifier | distributor | - | 2 | -50°C | 150°C | 149 K |
SDB102 | 1.0A, 100V ultra fast recovery rectifier | distributor | - | - | - | - | 103 K |
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