| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| B1100/B | 100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection application | distributor | SMA | 2 | -65°C | 150°C | 64 K |
| B1100LB | 100V; 1.0A high voltage schottky barrier diode. For use in low voltage, high frequency inverters, free wheeling and polarity protection applications | distributor | SMB | 2 | -65°C | 150°C | 45 K |
| HSB1109 | Emitter to base voltage:5V 100mA PNP epitaxial planar transistor | distributor | - | 3 | - | - | 33 K |
| HSB1109 | Emitter to base voltage:5V 100mA PNP epitaxial planar transistor | distributor | - | 3 | - | - | 33 K |
| HSB1109S | Emitter to base voltage:5V 100mA PNP epitaxial planar transistor for low frequency and high voltage amplifier applications | distributor | - | 3 | - | - | 36 K |
| SB110 | 100V; 1.0A high voltage schottky barrier rectifier. For use in low voltage, high frequency inverters, free wheeling and polarity protection apllication | distributor | - | 2 | -65°C | 125°C | 63 K |
| SB1100S | 100 V, 1 A, schottky barrier rectifier | distributor | - | 2 | -50°C | 125°C | 145 K |
| TB1100H | 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 184 K |
| TB1100L | 90V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 190 K |
| TB1100M | 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
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