| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SB1185 | PNP power transistor, 60V, 3A | ROHM | - | 3 | -55°C | 150°C | 129 K |
| B1161UA4 | 160 mA, battrax quad negative SLIC protector | distributor | SOIC | 6 | -40°C | 125°C | 1 M |
| B1161UC4 | 160 mA, battrax quad negative SLIC protector | distributor | SOIC | 6 | -40°C | 125°C | 1 M |
| BB119 | 15 V, variable capacitance diode | Philips-Semiconductors | SOD | 2 | - | - | 28 K |
| PDTB114ET | 50 V,PNP resistor-eguipped transistor | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 50 K |
| PHB112N06T | 55 V, N-channel enhancement mode field-effect transistor | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 262 K |
| PHB11N03LT | 30 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 107 K |
| PHB11N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
| RD28F1602C3B110 | 16-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family,110ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
| RD28F1604C3B110 | 16-Mbit, 3 Volt advanced+boot block fflash memory (C3) stacked-chip scale package family,110ns | Intel-Corporation | BGA | 66 | -25°C | 85°C | 1 M |
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