| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BTB112-800TW | 12A TRIACS | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
| PHB11N06LT | TrenchMOS transistor. Logic level FET. | Philips-Semiconductors | SOT404 | 3 | -55°C | 175°C | 76 K |
| PHB11N50E | PowerMOS transistor. Avalancne energy rated. | Philips-Semiconductors | SOT404 | 3 | -55°C | 150°C | 41 K |
| QRB1134 | PHOTOTRANSISTOR REFLECTIVE OBJECT SENSOR | Fairchild-Semiconductor | - | - | - | - | 47 K |
| QVB11134 | SLOTTED OPTICAL SWITCH | Fairchild-Semiconductor | - | - | - | - | 207 K |
| STB11NK40Z | N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 579 K |
| STB11NM60 | N-CHANNEL 600V - 0.4 OHM - 11A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 548 K |
| STB11NM60-1 | N-CHANNEL 600V - 0.4 OHM - 11A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 548 K |
| STB11NM60A-1 | N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 367 K |
| STB11NM80 | N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/D2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
| << [24] [25] [26] [27] [28] 29 [30] [31] [32] [33] |
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